Behavioral Modelling of CMOSFETs and CNTFETs Based Low Noise Amplifier

Low Noise Amplifier is considered as one of the most important component at the receiver end. The basic characteristics and features that a device should possess in the field of Wireless Sensor Network is high gain with low power consumption and size as miniaturize as possible. The Carbon Nano Tube Field Effect Transistors (CNTFETs) are being widely studied as possible successors to silicon based CMOSFETs that have a size much smaller than that of the conventional transistors. This paper presents the behavioral modeling and comparative performance interpretations of a Low Noise Amplifier based on CMOSFETs and CNTFETs using Verilog-A hardware description Language.