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Investigating the Effect of Buried Oxide (Box) in the Drift Region of a Super Junction Mosfet
In this paper, we propose a new SJMOSFET (Super junction MOSFET) with buried oxide in its drift region. The proposed device is simulated using PISCES-II, a 2-D numerical device simulator. The results show an improvement in the breakdown performance as compared to the conventional SJMOSFET due to a reduction in the vertical electric field. In addition, the proposed device i.e. in NBOX1-SJMOSFET shows a linear relation between the Bv and Ron as compared to the conventional device. Various results obtained reveal that the device having BOX in the n-pillar gives the better results. The breakdown voltage has been increased by about 20.439% in NBOX1-SJMOSFET leading to improvement in various other performance parameters with BOX in the n-pillar as compared to BOX in the p-pillar and conventional device.
Keywords
Superjunction (Sjmosfet), Breakdown Voltage (Bv), Buried Oxide (Box), On-Resistance (Ron), Power Mosfet, Device Simulation.
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