![Open Access](https://i-scholar.in/lib/pkp/templates/images/icons/fulltextgreen.png)
![Restricted Access](https://i-scholar.in/lib/pkp/templates/images/icons/fulltextred.png)
EMF of Hot Charge Carriers Arising at the p-n-Junction under the Influence of the Microwave Field and Light
It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.
Keywords
Hot Electrons, The Microwave Field, p-n-Junction, Light, Photocurrent, Generation and Recombination Currents.
User
Font Size
Information
![](https://i-scholar.in/public/site/images/abstractview.png)
Abstract Views: 645
![](https://i-scholar.in/public/site/images/pdfview.png)
PDF Views: 1