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Experimental Investigation of Interface Bonding Characteristics of AL-11% Si and Silicon Carbide


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1 Dept. of Mechanical Engg., College of Engg., Anna University, Chennai, India
     

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Al reacts with SiC during liquid state processing and forms undesirable thermodynamically unstable reaction, which resulting in deterioration of properties. The quality of interface bond between matrix and reinforcement is important in composite strengthening. Interface bond between the aluminium and silicon carbide was obtained by Al-Si melt and SiC reaction. The Al/SiC specimens were prepared by varying processing temperature with constant holding time. The interface structural morphologies have been evaluated by using scanning electron microscope (SEM) and interfacial compounds were identified by using energy dispersive spectroscopy (EDS). The interface characteristics were evaluated by tensile test and microhardness test.
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  • Experimental Investigation of Interface Bonding Characteristics of AL-11% Si and Silicon Carbide

Abstract Views: 208  |  PDF Views: 0

Authors

G. G. Sozhamannan
Dept. of Mechanical Engg., College of Engg., Anna University, Chennai, India
S. Balasivanandha Prabu
Dept. of Mechanical Engg., College of Engg., Anna University, Chennai, India

Abstract


Al reacts with SiC during liquid state processing and forms undesirable thermodynamically unstable reaction, which resulting in deterioration of properties. The quality of interface bond between matrix and reinforcement is important in composite strengthening. Interface bond between the aluminium and silicon carbide was obtained by Al-Si melt and SiC reaction. The Al/SiC specimens were prepared by varying processing temperature with constant holding time. The interface structural morphologies have been evaluated by using scanning electron microscope (SEM) and interfacial compounds were identified by using energy dispersive spectroscopy (EDS). The interface characteristics were evaluated by tensile test and microhardness test.