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Investigation on the Effect of Nucleation Time on CNT Growth Process using RF-PECVD


Affiliations
1 Central Manufacturing Technology Institute (CMTI), Bengaluru, India
2 National Institute of Technology Karnataka (NITK), Surathkal, India
     

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Carbon Nano Tubes (CNTs) were deposited on Silicon substrate by RF plasma enhanced chemical vapour deposition (RF-PECVD). The deposition was carried out at 550 V bias and 600°C with C2H2 precursor gas diluted with H2 in the ratio of 1:4. Transition metal catalysts are required for CNT growth by PECVD. It is believed that the catalyst on the substrate must be in the form of particles instead of smooth, continuous films. The eventual particle size and the resultant nanotube diameter correlates to film thickness. Thinner films in general lead to smaller particles and tube diameters. While a small grain size is not guaranteed in as-prepared films, steps are taken to break the film into desired particles to form island like structures. This work investigates the effect of Nucleation and the time interval of Nucleation on the CNT growth process.

Keywords

CNT, Nucleation, RF-PECVD
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  • 1. Meyyappan M and Srivastava D: Carbon Nanotubes: Handbook of Nanoscience, Engineering, and Technology, 2003, Boca Raton, FL: CRC Press.

  • Meyyappan M: Plasma Sources, ‘Sci. Technol’. 12, 2003, 205–216.

  • RGuzm´an de Villoria: Nanotechnology, 20, 2009, 405611 (IOP publishing)

  • The Wondrous World of Carbon Nanotubes ‘a review of current carbon nanotube technologies’: 2003, Eindhoven University of Technology


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  • Investigation on the Effect of Nucleation Time on CNT Growth Process using RF-PECVD

Abstract Views: 232  |  PDF Views: 0

Authors

K. Ankit
Central Manufacturing Technology Institute (CMTI), Bengaluru, India
K. Niranjan Reddy
Central Manufacturing Technology Institute (CMTI), Bengaluru, India
Gokul
National Institute of Technology Karnataka (NITK), Surathkal, India
N. Balashanmugam
Central Manufacturing Technology Institute (CMTI), Bengaluru, India

Abstract


Carbon Nano Tubes (CNTs) were deposited on Silicon substrate by RF plasma enhanced chemical vapour deposition (RF-PECVD). The deposition was carried out at 550 V bias and 600°C with C2H2 precursor gas diluted with H2 in the ratio of 1:4. Transition metal catalysts are required for CNT growth by PECVD. It is believed that the catalyst on the substrate must be in the form of particles instead of smooth, continuous films. The eventual particle size and the resultant nanotube diameter correlates to film thickness. Thinner films in general lead to smaller particles and tube diameters. While a small grain size is not guaranteed in as-prepared films, steps are taken to break the film into desired particles to form island like structures. This work investigates the effect of Nucleation and the time interval of Nucleation on the CNT growth process.

Keywords


CNT, Nucleation, RF-PECVD

References