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Detecting Topography of WO3 Semiconductor by Atomic Force Microscope (AFM) and Scanning Tunneling Microscope (STM)


Affiliations
1 Department of Environment, University of Kufa, 54003 Kufa, Box 21, Najaf Governorate, Iraq
 

The morphology of WO3 is studied by AFM microscopy in order to specify the roughness which usually controls the movement of a free electron between the different layers which is fabricated the sensor. Additionally, STM microscopy gives the electrical characteristics of the sample by (STS) in a nanoscopic scale. As well as the electronic cloud which is located in the middle distance between atoms and resulted by insertion of their electrons.

Keywords

AFM Microscopy, STM Microscopy, WO3 Semiconductor.
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  • Detecting Topography of WO3 Semiconductor by Atomic Force Microscope (AFM) and Scanning Tunneling Microscope (STM)

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Authors

QA Anwar
Department of Environment, University of Kufa, 54003 Kufa, Box 21, Najaf Governorate, Iraq

Abstract


The morphology of WO3 is studied by AFM microscopy in order to specify the roughness which usually controls the movement of a free electron between the different layers which is fabricated the sensor. Additionally, STM microscopy gives the electrical characteristics of the sample by (STS) in a nanoscopic scale. As well as the electronic cloud which is located in the middle distance between atoms and resulted by insertion of their electrons.

Keywords


AFM Microscopy, STM Microscopy, WO3 Semiconductor.

References