Oriental Journal of Computer Science and Technology

Open Access Open Access  Restricted Access Subscription Access

Analysis of a Passive Memristor Crossbar


Affiliations
1 Department Theory of Electrical Engineering, Technical University of Sofia, 1000 Sofia, St. Kliment Ohridski 8 Blvd, Bulgaria
 

The purpose of the present research is to propose a detailed analysis of a fragment of a passive memristor memory crossbar. For computer simulations a previously proposed by the authors in another paper nonlinear dopant drift memristor model with a modified window function is now applied. The results obtained by the simulation are compared with experimentally recorded current-voltage relationships and with these derived by the use of several basic memristor models as well. A relatively good coincidence between the results is established. The fragment of a memristor memory crossbar is simulated for the procedures of writing, reading and erasing information in the memristor cells. The effect of the basic memristor parameters, as the ionic drift mobility, the ON and OFF resistances and the physical length of the element on its switching speed is discussed. After a number of simulations, it was established that due to the self-rectifying effect the parasitic sneak paths do not strongly influence the normal operation of the memristor memory crossbar. It is confirmed that the model with a modified Biolek window function proposed in our previous research could be used for simulations of complex memristive electronic circuits for hard-switching.

Keywords

Memristor Memory Crossbar, Nonlinear Dopant Drift, Modified Window Function, Parasitic Sneak Paths, Hard-Switching Mode.
User
Notifications
Font Size

  • Chua, L. “Memristor-The Missing Circuit Element”, IEEE Transactions on Circuit Theory, vol. 18, no. 5, pp. 507 – 519, 1971.

  • Strukov, D., G. Snider, D. Stewart, R. S. Williams, “The Missing Memristor Found”, Nature Letters, vol. 453, DOI: 10.1038/nature 06932, pp. 80-83, 2008.

  • Joglekar, Y.; Wolf, S. The Elusive Memristor: Properties of Basic Electrical Circuits. Eur. J. Phys.2009, 30, 661–675, doi:10.1088/01430807/30/4/001.

  • Abdalla, H.; Pickett, M. SPICE modeling of memristors. IEEE Int. Symp. Circuits Syst. 2011, 1832-1835, doi: 10.1109/ISCAS.2011.5937942.

  • Dozortsev, A., Goldshtein, I., Kvatinsky, S. Analysis of the row grounding technique in a memristor-based crossbar array. Int. J. Circ. Theor. Appl. (2017), DOI: 10.1002/cta.2399, pp. 1-16

  • Yang, J., Zhang, M., Pickett, M., Miao, F., Strachan, J., Li, W., Yi, W., Ohlberg, D., Choi, B., Wu, W., Nickel, J., Ribeiro, G., Williams, R. Engineering nonlinearity into memristors for passive crossbar applications. Appl. Phys. Lett. 100, 113501 (2012), pp. 1-5.

  • Yang, J., Strukov, D., Stewart, D. Memristive devices for computing. Nature Nanotechnology, Vol. 8, 2013, DOI: 10.1038/NNANO.2012.240, pp. 13-24.

  • Carta, D., Salaoru, I., Khiat, A., Regoutz, A., Mitterbauer, C., Harrison, N., Prodromakis, T. Investigation of the Switching Mechanism in TiO2 Based RRAM: A Two-Dimensional EDX Approach. ACS Appl. Mater. Interfaces 2016, 8, DOI: 10.1021/acsami.6b04919, pp. 19605-19611.

  • Regoutz, A., Gupta, I., Serb, A., Khiat, A., Borgatti, F., Lee, T., Schlueter, C., Torelli, P., Gobaut, B., Light, M., Carta, D., Pearce, S., Panaccione, G., Prodromakis, T. Role and Optimization of the Active Oxide Layer in TiO 2 - Based RRAM. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim., Adv. Funct. Mater. 2016, 26, DOI: 10.1002/adfm.201503522, pp. 507-513.

  • Serb, A. Redman-White, W., Papavassiliou, C., Prodromakis, T. Practical determination of individual element resistive states in selectorless RRAM arrays. IEEE Transactions on Circuits and Systems I: Regular Papers, Volume: 63, Issue: 6, June 2016, pp. 827-835, DOI: 10.1109/TCSI.2015.2476296.

  • Biolek, Z., D. Biolek, V. Biolkova. SPICE Model of Memristor with Nonlinear Dopant Drift . Radioengineering, Vol. 18, 2009, pp. 210-214.

  • Corinto, F., A. Ascoli, “A Boundary Condition Based Approach to the Modeling of Memristor Nanostructures”, IEEE Transactions on Circuits and Systems - I, Regular Papers, vol. 59, no. 11, doi: 10.1109/TCSI.2012.2190563, pp. , 2713-2726, 2012.

  • Ascoli, A., F. Corinto, R. Tetzlaff, “Generalized Boundary Condition Memristor Model”, Int. J. Circ. Theor. Appl. 44, DOI: 10.1002/cta.2063, pp. 60-84, 2016.

  • Ascoli, A.; Tetzlaff, R.; Biolek, Z.; Kolka, Z.; Biolkovà, V.; Biolek, D. The Art of Finding Accurate Memristor Model Solutions. IEEE J. Emerg. Sel. Top. Circuits Syst.2015, 5, 133-142, doi:10.1109/JETCAS.2015.2426493.

  • Mladenov, V., S. Kir ilov. A Nonlinear Drift Memristor Model with a Modified Biolek Window Function and Activation Threshold. Electronics, 6(4), 77; doi:10.3390/electronics6040077, pp. 1-15, 2017.

  • Gadjeva, E., T. Kouyoumjiev, S. Farchy, M. Hristov, A. Popov. Computer modelling and simulation of electronic and electrical circuits using Cadence PSpice. Sofia, Meridian 22 Publishing house, 2009 (In Bulgarian).

  • Walsh, A., Carley, R., Feely, O., Ascoli, A. Memristor circuit investigation through a new tutorial toolbox. IEEE, Germany, DOI: 10.1109/ECCTD.2013.6662261, pp. 1-4, 2013.

  • Moler, C. MATLAB Users'Guide. Department of computer science, University of New Mexico, 1980.


Abstract Views: 238

PDF Views: 0




  • Analysis of a Passive Memristor Crossbar

Abstract Views: 238  |  PDF Views: 0

Authors

Stoyan Kirilov
Department Theory of Electrical Engineering, Technical University of Sofia, 1000 Sofia, St. Kliment Ohridski 8 Blvd, Bulgaria
Valeri Mladenov
Department Theory of Electrical Engineering, Technical University of Sofia, 1000 Sofia, St. Kliment Ohridski 8 Blvd, Bulgaria

Abstract


The purpose of the present research is to propose a detailed analysis of a fragment of a passive memristor memory crossbar. For computer simulations a previously proposed by the authors in another paper nonlinear dopant drift memristor model with a modified window function is now applied. The results obtained by the simulation are compared with experimentally recorded current-voltage relationships and with these derived by the use of several basic memristor models as well. A relatively good coincidence between the results is established. The fragment of a memristor memory crossbar is simulated for the procedures of writing, reading and erasing information in the memristor cells. The effect of the basic memristor parameters, as the ionic drift mobility, the ON and OFF resistances and the physical length of the element on its switching speed is discussed. After a number of simulations, it was established that due to the self-rectifying effect the parasitic sneak paths do not strongly influence the normal operation of the memristor memory crossbar. It is confirmed that the model with a modified Biolek window function proposed in our previous research could be used for simulations of complex memristive electronic circuits for hard-switching.

Keywords


Memristor Memory Crossbar, Nonlinear Dopant Drift, Modified Window Function, Parasitic Sneak Paths, Hard-Switching Mode.

References