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Analysis of a Passive Memristor Crossbar


Affiliations
1 Department Theory of Electrical Engineering, Technical University of Sofia, 1000 Sofia, St. Kliment Ohridski 8 Blvd, Bulgaria
 

The purpose of the present research is to propose a detailed analysis of a fragment of a passive memristor memory crossbar. For computer simulations a previously proposed by the authors in another paper nonlinear dopant drift memristor model with a modified window function is now applied. The results obtained by the simulation are compared with experimentally recorded current-voltage relationships and with these derived by the use of several basic memristor models as well. A relatively good coincidence between the results is established. The fragment of a memristor memory crossbar is simulated for the procedures of writing, reading and erasing information in the memristor cells. The effect of the basic memristor parameters, as the ionic drift mobility, the ON and OFF resistances and the physical length of the element on its switching speed is discussed. After a number of simulations, it was established that due to the self-rectifying effect the parasitic sneak paths do not strongly influence the normal operation of the memristor memory crossbar. It is confirmed that the model with a modified Biolek window function proposed in our previous research could be used for simulations of complex memristive electronic circuits for hard-switching.

Keywords

Memristor Memory Crossbar, Nonlinear Dopant Drift, Modified Window Function, Parasitic Sneak Paths, Hard-Switching Mode.
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  • Analysis of a Passive Memristor Crossbar

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Authors

Stoyan Kirilov
Department Theory of Electrical Engineering, Technical University of Sofia, 1000 Sofia, St. Kliment Ohridski 8 Blvd, Bulgaria
Valeri Mladenov
Department Theory of Electrical Engineering, Technical University of Sofia, 1000 Sofia, St. Kliment Ohridski 8 Blvd, Bulgaria

Abstract


The purpose of the present research is to propose a detailed analysis of a fragment of a passive memristor memory crossbar. For computer simulations a previously proposed by the authors in another paper nonlinear dopant drift memristor model with a modified window function is now applied. The results obtained by the simulation are compared with experimentally recorded current-voltage relationships and with these derived by the use of several basic memristor models as well. A relatively good coincidence between the results is established. The fragment of a memristor memory crossbar is simulated for the procedures of writing, reading and erasing information in the memristor cells. The effect of the basic memristor parameters, as the ionic drift mobility, the ON and OFF resistances and the physical length of the element on its switching speed is discussed. After a number of simulations, it was established that due to the self-rectifying effect the parasitic sneak paths do not strongly influence the normal operation of the memristor memory crossbar. It is confirmed that the model with a modified Biolek window function proposed in our previous research could be used for simulations of complex memristive electronic circuits for hard-switching.

Keywords


Memristor Memory Crossbar, Nonlinear Dopant Drift, Modified Window Function, Parasitic Sneak Paths, Hard-Switching Mode.

References