Indian Journal of Engineering & Materials Sciences

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Tailoring the Properties of Nanocrystalline Tin(II) Selenide Films through Precursor Concentration Modulation


Affiliations
1 Department of Physics, Sri Guru Teg Bahadur Khalsa College, Anandpur Sahib 140 118, India
2 Principal Scientist, National Physical Laboratory, New Delhi 110 012, India
3 Department of Physics, National Institute of Technology, Kurukshetra 136 119, India
 

An X-ray diffractometer for structural, a UV-VIS Spectrophotometer for optical, and a unique aluminium sample holder intended to examine the electrical properties of the synthesized SnSe thin films on non-conductive glass substrates in an alkaline medium were used. Light shining through a transparent glass window illuminated the samples to examine their electrical (photoconductivity) properties. The XRD results show that all of the films are orthorhombic crystals. The concentration of the precursor affects microstructural characteristics such as micro strain, crystallite size, and dislocation density. SnSe thin films' optical bandgap is measured using absorbance measurements. Semiconducting properties are confirmed by measuring the electrical conductivity, which reaches its highest value at the optimal precursor concentration. The as-grown SnSe films exhibit tunable photo response properties, which boost the practical application of the films in photovoltaic and solar cells.

Keywords

Chemical bath deposition, Thin Films, Tin selenide, Precursor, X-Ray Diffractometer (XRD)
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  • Tailoring the Properties of Nanocrystalline Tin(II) Selenide Films through Precursor Concentration Modulation

Abstract Views: 101  |  PDF Views: 52

Authors

Deep Shikha
Department of Physics, Sri Guru Teg Bahadur Khalsa College, Anandpur Sahib 140 118, India
Vimal Mehta
Department of Physics, Sri Guru Teg Bahadur Khalsa College, Anandpur Sahib 140 118, India
Mahesh Kumar
Principal Scientist, National Physical Laboratory, New Delhi 110 012, India
R. P. Chauhan
Department of Physics, National Institute of Technology, Kurukshetra 136 119, India

Abstract


An X-ray diffractometer for structural, a UV-VIS Spectrophotometer for optical, and a unique aluminium sample holder intended to examine the electrical properties of the synthesized SnSe thin films on non-conductive glass substrates in an alkaline medium were used. Light shining through a transparent glass window illuminated the samples to examine their electrical (photoconductivity) properties. The XRD results show that all of the films are orthorhombic crystals. The concentration of the precursor affects microstructural characteristics such as micro strain, crystallite size, and dislocation density. SnSe thin films' optical bandgap is measured using absorbance measurements. Semiconducting properties are confirmed by measuring the electrical conductivity, which reaches its highest value at the optimal precursor concentration. The as-grown SnSe films exhibit tunable photo response properties, which boost the practical application of the films in photovoltaic and solar cells.

Keywords


Chemical bath deposition, Thin Films, Tin selenide, Precursor, X-Ray Diffractometer (XRD)

References