Indian Journal of Engineering & Materials Sciences

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Ion-beam-induced Modifications of Nanocrystalline ZnO Thin Films Grown by Atomic Layer Deposition


Affiliations
1 University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
2 Department of Botany, Sri Venkateswara College, University of Delhi, New Delhi 110 021, India
3 Department of Computer Science & Engineering, Maharaja Surajmal Institute of Technology, New Delhi, 110 058, India
4 University School of Information and Communication Technology, Gautam Buddha University, Greater Noida 201 312, India
 

Irradiation with distinct ions turns out to be an efficacious way to alter the optical, structural, electrical and morphological properties of different materials by instigating the strains, defects and structural transitions in it. Ion beam irradiation with Swift Heavy Ion (SHI) can originate defects in the materials by conveying the adequate energy to the lattice results into materials modifications. We will extensively study how the SHI irradiation influences the Atomic Layer Deposition (ALD) Grown Zinc Oxide (ZnO) thin films’ distinct characteristics, which may be applicable for evolving the distinct sensors, capacitors and optical devices based on it. In the present work, the influence of high electronic energy deposition on the physico-chemical and morphological properties of ZnO thin films synthesized by ALD technique have been investigated at different fluences. The thin films of ZnO irradiated by 120 MeV Ti9+with a fluence of 5E11 to 1E13 ions/cm2 Atomic Force Microscopy (AFM) analysis reveals notable grain boundaries and proposed that the roughness of irradiated thin films alters as compared to pristine thin films. The thickness of ZnO thin films were estimated by Rutherford backscattering spectroscopy (RBS). Photoluminescence (PL) intensity enhancement has been remarked in the Ti ion beam treated ZnO thin films samples as compared to pristine specimen. The alterations of the of Zn 2p and O 1sbinding energy of pristine and ion irradiated thin films were examined by X-ray Photoelectron Spectroscopy (XPS).

Keywords

Atomic Force Microscopy (AFM), Atomic Layer Deposition (ALD), Rutherford Backscattering Spectroscopy (RBS), Swift Heavy Ion (SHI), X-ray Photoelectron Spectroscopy (XPS), Zinc Oxide (ZnO).
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  • Ion-beam-induced Modifications of Nanocrystalline ZnO Thin Films Grown by Atomic Layer Deposition

Abstract Views: 101  |  PDF Views: 49

Authors

Deepika Gupta
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
Shweta Sharma
Department of Botany, Sri Venkateswara College, University of Delhi, New Delhi 110 021, India
Sonica Upadhyay
Department of Computer Science & Engineering, Maharaja Surajmal Institute of Technology, New Delhi, 110 058, India
S. K. Sharma
University School of Information and Communication Technology, Gautam Buddha University, Greater Noida 201 312, India
Vishnu Chauhan
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India
Rajesh Kumar
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, New Delhi 110 078, India

Abstract


Irradiation with distinct ions turns out to be an efficacious way to alter the optical, structural, electrical and morphological properties of different materials by instigating the strains, defects and structural transitions in it. Ion beam irradiation with Swift Heavy Ion (SHI) can originate defects in the materials by conveying the adequate energy to the lattice results into materials modifications. We will extensively study how the SHI irradiation influences the Atomic Layer Deposition (ALD) Grown Zinc Oxide (ZnO) thin films’ distinct characteristics, which may be applicable for evolving the distinct sensors, capacitors and optical devices based on it. In the present work, the influence of high electronic energy deposition on the physico-chemical and morphological properties of ZnO thin films synthesized by ALD technique have been investigated at different fluences. The thin films of ZnO irradiated by 120 MeV Ti9+with a fluence of 5E11 to 1E13 ions/cm2 Atomic Force Microscopy (AFM) analysis reveals notable grain boundaries and proposed that the roughness of irradiated thin films alters as compared to pristine thin films. The thickness of ZnO thin films were estimated by Rutherford backscattering spectroscopy (RBS). Photoluminescence (PL) intensity enhancement has been remarked in the Ti ion beam treated ZnO thin films samples as compared to pristine specimen. The alterations of the of Zn 2p and O 1sbinding energy of pristine and ion irradiated thin films were examined by X-ray Photoelectron Spectroscopy (XPS).

Keywords


Atomic Force Microscopy (AFM), Atomic Layer Deposition (ALD), Rutherford Backscattering Spectroscopy (RBS), Swift Heavy Ion (SHI), X-ray Photoelectron Spectroscopy (XPS), Zinc Oxide (ZnO).

References