Indian Journal of Physiotherapy & Occupational Therapy-An International Journal

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To Study the Characteristics and efficacy of 820 Nm GA-Al-As Diode Laser for the Treatment of Plantar Fasciitis among Porters/Coolies in Kumaun Region, India: A Randomized Clinical Trial


Affiliations
1 Dept of Orthopaedics, NIMS Medical College, NIMS University, Shobha Nagar, Jaipur, Rajasthan, India
2 Dept of Orthopaedics, Govt. Medical College& STM Hospital, Haldwani, Uttarakhand, India
     

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Introduction: Plantar fasciitis (PF) is a common pathological condition affecting the hind foot and was first described by Wood in 1812, he attributed it to tuberculosis. By definition PF is an inflammation of the plantar fascia.

Objective: To investigate the effectiveness of 820 nm Ga-Al-As diode laser in the treatment of plantar fasciitis & to establish the status of diode laser as a popular modality for the treatment of plantar fasciitis where work exposure is a causative factor

Method: Eighty (80) subjects were selected on the basis of the inclusion and exclusion criteria and were recruited randomly to either 820nm Ga-Al-As diode laser (experimental group) or dummy irradiation (placebo group).

Result: Overall results showed significant difference in VAS, FFI and DF from 0 week to 4th week in Group A indicating that the rate of improvement in Group A was more than Group B. Hence concluding the positive contribution of therapeutic modality for pain relief, increasing functional ability and increasing ROM (DF) whereas no difference was seen in (PF) ROM

Conclusion: The present study finds that LLLT using Ga-Al-As diode laser at the parameters shown is a safe and effective treatment method for the patients having plantar fasciitis.


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  • To Study the Characteristics and efficacy of 820 Nm GA-Al-As Diode Laser for the Treatment of Plantar Fasciitis among Porters/Coolies in Kumaun Region, India: A Randomized Clinical Trial

Abstract Views: 590  |  PDF Views: 0

Authors

Dheeraj Lamba
Dept of Orthopaedics, NIMS Medical College, NIMS University, Shobha Nagar, Jaipur, Rajasthan, India
Mukesh Tiwari
Dept of Orthopaedics, NIMS Medical College, NIMS University, Shobha Nagar, Jaipur, Rajasthan, India
Pankaj Singh
Dept of Orthopaedics, Govt. Medical College& STM Hospital, Haldwani, Uttarakhand, India

Abstract


Introduction: Plantar fasciitis (PF) is a common pathological condition affecting the hind foot and was first described by Wood in 1812, he attributed it to tuberculosis. By definition PF is an inflammation of the plantar fascia.

Objective: To investigate the effectiveness of 820 nm Ga-Al-As diode laser in the treatment of plantar fasciitis & to establish the status of diode laser as a popular modality for the treatment of plantar fasciitis where work exposure is a causative factor

Method: Eighty (80) subjects were selected on the basis of the inclusion and exclusion criteria and were recruited randomly to either 820nm Ga-Al-As diode laser (experimental group) or dummy irradiation (placebo group).

Result: Overall results showed significant difference in VAS, FFI and DF from 0 week to 4th week in Group A indicating that the rate of improvement in Group A was more than Group B. Hence concluding the positive contribution of therapeutic modality for pain relief, increasing functional ability and increasing ROM (DF) whereas no difference was seen in (PF) ROM

Conclusion: The present study finds that LLLT using Ga-Al-As diode laser at the parameters shown is a safe and effective treatment method for the patients having plantar fasciitis.


References