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The Role of Nano Particles (Si) in Gate Dielectric


Affiliations
1 Member of Young Researchers Club, Islamic Azad University, Jouybar branch, Jouybar, Iran, Islamic Republic of
2 Dept. of Physics, Faculty of Basic Science, University of Mazandaran, Babolsar 47416- 1467, Iran, Islamic Republic of
3 Member of Young Researchers Club, Islamic Azad University, Sari branch, 48161-194, Sari, Iran, Islamic Republic of
4 Dept. of Civil Engineering, Islamic Azad University, Jouybar branch, Jouybar, Iran, Islamic Republic of
 

The progressively decreasing feature size of the circuit components, particles and electronic devices has tremendously increased the need for studying and investigating the nano structural properties of materials. We have grown titanium oxide on the Si (100) substrate at 500°C and one atmosphere pressure. Some researchers have believed that an intermediate silicon oxide film can be made between titanium oxide film and substrate but which turned to be of less use. We added silicon nano particles (100 nm) into titanium oxide film that could modify the titanium oxide morphology as revealed in x-ray diffraction patterns and scanning electron microscopy images. The obtained results show that the existence of silicon nano particles in titanium oxide film resulted in better stability. The improved film can thus be used as a good gate dielectric film for the future CMOS (Complementary metal oxide semiconductor) devices.

Keywords

Nanotechnology, Nano Transistor, Nano Particle, Gate Dielectric
User

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  • The Role of Nano Particles (Si) in Gate Dielectric

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Authors

Aref Sadeghi Nik
Member of Young Researchers Club, Islamic Azad University, Jouybar branch, Jouybar, Iran, Islamic Republic of
Ali Bahari
Dept. of Physics, Faculty of Basic Science, University of Mazandaran, Babolsar 47416- 1467, Iran, Islamic Republic of
Abdol Ghaffar Ebadi
Member of Young Researchers Club, Islamic Azad University, Sari branch, 48161-194, Sari, Iran, Islamic Republic of
Adel Sadeghi Nik
Member of Young Researchers Club, Islamic Azad University, Jouybar branch, Jouybar, Iran, Islamic Republic of
Abbas Ghasemi-Hamzekolaee
Dept. of Civil Engineering, Islamic Azad University, Jouybar branch, Jouybar, Iran, Islamic Republic of

Abstract


The progressively decreasing feature size of the circuit components, particles and electronic devices has tremendously increased the need for studying and investigating the nano structural properties of materials. We have grown titanium oxide on the Si (100) substrate at 500°C and one atmosphere pressure. Some researchers have believed that an intermediate silicon oxide film can be made between titanium oxide film and substrate but which turned to be of less use. We added silicon nano particles (100 nm) into titanium oxide film that could modify the titanium oxide morphology as revealed in x-ray diffraction patterns and scanning electron microscopy images. The obtained results show that the existence of silicon nano particles in titanium oxide film resulted in better stability. The improved film can thus be used as a good gate dielectric film for the future CMOS (Complementary metal oxide semiconductor) devices.

Keywords


Nanotechnology, Nano Transistor, Nano Particle, Gate Dielectric

References





DOI: https://doi.org/10.17485/ijst%2F2010%2Fv3i6%2F29771