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Morphological Studies of Single Phase Alumina Fabricated by Wet Milling Method


Affiliations
1 Department of Chemistry, Veer Surendra Sai University of Technology, Burla – 768 018, Odisha, India
2 Department of Materials Chemistry, Institute of Minerals and Materials Technology (CSIR), Bhubaneswar – 751 013, Odisha, India
3 Department of Science and Technology, Technology Bhavan, New Mehrauli Road, New Delhi – 110 016, India

A wet milling process has been used as a novel method to fabricate single phase alumina. To fabricate the most thermodynamically stable form of alumina i.e., α-Al<sub>2</sub>O<sub>3</sub>, slurry method has been used here. α-Al<sub>2</sub>O<sub>3</sub> has the widest band gap ~8.8 eV which makes it more valuable in electronic devices for use as a perfect insulator. Further, to confirm the surface morphology of the prepared α-Al<sub>2</sub>O<sub>3</sub> sample, scanning electronic microscopy has been done. The prepared α-Al<sub>2</sub>O<sub>3</sub> sample has been characterized using X-ray diffraction pattern, Fourier transform infra-red spectroscopy and photoluminescence spectroscopy. Raman spectroscopy of prepared α-Al<sub>2</sub>O<sub>3</sub> has also been performed to understand the behaviour at microscopic level and also to confirm the purity of the single phase α-Al<sub>2</sub>O<sub>3</sub> sample.

Keywords

Single phase alumina, α-Al2O3, Slurry, Wet milling
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  • Morphological Studies of Single Phase Alumina Fabricated by Wet Milling Method

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Authors

Rupashree Dash
Department of Chemistry, Veer Surendra Sai University of Technology, Burla – 768 018, Odisha, India
Laxmidhar Besra
Department of Materials Chemistry, Institute of Minerals and Materials Technology (CSIR), Bhubaneswar – 751 013, Odisha, India
Sukalyan Dash
Department of Science and Technology, Technology Bhavan, New Mehrauli Road, New Delhi – 110 016, India

Abstract


A wet milling process has been used as a novel method to fabricate single phase alumina. To fabricate the most thermodynamically stable form of alumina i.e., α-Al<sub>2</sub>O<sub>3</sub>, slurry method has been used here. α-Al<sub>2</sub>O<sub>3</sub> has the widest band gap ~8.8 eV which makes it more valuable in electronic devices for use as a perfect insulator. Further, to confirm the surface morphology of the prepared α-Al<sub>2</sub>O<sub>3</sub> sample, scanning electronic microscopy has been done. The prepared α-Al<sub>2</sub>O<sub>3</sub> sample has been characterized using X-ray diffraction pattern, Fourier transform infra-red spectroscopy and photoluminescence spectroscopy. Raman spectroscopy of prepared α-Al<sub>2</sub>O<sub>3</sub> has also been performed to understand the behaviour at microscopic level and also to confirm the purity of the single phase α-Al<sub>2</sub>O<sub>3</sub> sample.

Keywords


Single phase alumina, α-Al2O3, Slurry, Wet milling