Indian Journal of Pure and Applied Physics

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Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes


Affiliations
1 Department of Physics, Govt PG College Bazpur, India
2 Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201 307, India
3 Department of Physics, R H G P G College Kashipur, India

PN junction is the basic building block for the fabrication of optoelectronic devices. ZnO shows the n-type behaviour. P-type doping with suitable hole concentration and reduced defects is one of the major challenges in the fabrication of ZnO based devices. Nitrogen, Phosphorus, Arsenic and Bismuth are some of the potential p-type dopants, but none of them have desired electrical properties to fabricate p-n junction from ZnO. In the present work, we proposed a hybrid n-ZnO/p-GaN hetero-structure, in which n-type ZnO film is placed on Mg doped GaN film. Simulation results revealed that the electroluminescence intensities increases in hybrid LED structure and there is a strong sensitivity towards the layer properties in hybrid structure.
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  • Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes

Abstract Views: 160  | 

Authors

Aadarsh Kumar Chaudhri
Department of Physics, Govt PG College Bazpur, India
Bhubesh Chander Joshi
Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201 307, India
Vanita Devi
Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology, Noida 201 307, India
Mahipal Singh
Department of Physics, R H G P G College Kashipur, India

Abstract


PN junction is the basic building block for the fabrication of optoelectronic devices. ZnO shows the n-type behaviour. P-type doping with suitable hole concentration and reduced defects is one of the major challenges in the fabrication of ZnO based devices. Nitrogen, Phosphorus, Arsenic and Bismuth are some of the potential p-type dopants, but none of them have desired electrical properties to fabricate p-n junction from ZnO. In the present work, we proposed a hybrid n-ZnO/p-GaN hetero-structure, in which n-type ZnO film is placed on Mg doped GaN film. Simulation results revealed that the electroluminescence intensities increases in hybrid LED structure and there is a strong sensitivity towards the layer properties in hybrid structure.