Open Access Open Access  Restricted Access Subscription Access

Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill


Affiliations
1 University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi 110 078, India
2 Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, A.P 515 134, India
 

Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).

Keywords

Phase purification; Ball milling; Manganese silicide; Earth-abundant; Doping.
User
Notifications
Font Size

  • Rao S P, Saw A K, Chotia C, Okram G & Dayal V, Appl Phys A, 127 (2021) 621.
  • Li D, Wu Z Y, Yin Z W, Lu Y Q, Huang Z G, You J H, Li J T, Huang L & Sun S G, Electrochimica Acta, 260 (2018) 830.
  • AndrĂ© S, Gottlieb U, Affronte M & Laborde O, J Magn Magn Mater, 272 (2004) 519.
  • Shukurova D M, Orekhov A S, Sharipov B Z, Klechkovskaya V V & Kamilov T S, Tech Phys, 56 (2011) 1423.
  • Tarasov I A, Visotin M A, Kuznetzova T V, Aleksandrovsky A S, Solovyov L A, Kuzubov A A & Nikolaeva K M, et al., J Mater Sci, 53 (10) (2018) 7571.
  • Xi C, Weathers A, Carrete J, Mukhopadhyay S, Delaire O, Stewart D A, Mingo N, et al., Nature Commun, 6 (2015) 6723.
  • Neeleshwar S, Saini A, Bairwa M K, Bisht N, Katre A & Rao G N, In Nanomaterials for Innovative Energy Systems and Devices, Singapore: Springer Nature Singapore, (2022) 103.
  • Caprara S, Kulatov E & Tugushev V V, The Eur Phys J B, 85 (2012) 1.
  • Migas D B, Shaposhnikov V L, Filonov A B, Borisenko V E & Dorozhkin N N, Phys Rev B, 77 (2008) 075205.
  • Perumal, Suresh, Gorsse S, Ail U, Prakasam M, Rajasekar P & Umarji A M, Mater Sci Semicond Process, 104 (2019) 104649.
  • Li W, Zhang J M, He T, Wang K & Xie Q, Mater Res Exp, 6 (2019) 096309.
  • Shin D K, Ur S C, Jang K W & Kim I H, J Electron Mater, 43 (2014) 2104.

Abstract Views: 99

PDF Views: 53




  • Synthetization and Characterization of Mo-doped Mn4Si7 by High Energy Ball Mill

Abstract Views: 99  |  PDF Views: 53

Authors

Anjali Saini
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi 110 078, India
R. Gowrishankar
Department of Physics, Sri Sathya Sai Institute of Higher Learning, Prasanthinilayam, A.P 515 134, India
Mukesh Kumar Bairwa
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi 110 078, India
S. Neeleshwara
University School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Delhi 110 078, India

Abstract


Mn4Si7 is a non-degenerating semiconductor with an indirect band gap of 0.77eV having multi-domain applications. The Mn4Si7 and Mo-doped Mn4Si7 were synthesized by high-energy ball milling at 600 RPM for 50H. From the X-ray diffraction (XRD), the tetragonal phase was observed. The average crystalline size was estimated by the Debye-Scherrer equation which lies below ~25 nm. The morphology studies reveal different shapes and sizes were observed by scanning electron microscopy (SEM).

Keywords


Phase purification; Ball milling; Manganese silicide; Earth-abundant; Doping.

References