Indian Journal of Pure and Applied Physics

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Fabrication of Bismuth Telluride Thin Films using Thermal Evaporation Technique and its Electrical Properties


Affiliations
1 Department of Physics, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
2 Department of Chemistry, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
 

Thin films have received great attention in recent years because of their extensive applications in various fields of science and technology. The studies of the electrical properties of semiconducting thin films have been primarily provoked by attractive micro-electronic device applications. Bismuth Telluride (Bi2Te3) is the most widely used material among the various V- VI compounds. In this study, thin films of Bi2Te3 were fabricated onto different substrates (i.e., glass and silica) by using thermal evaporation technique. Their structural, morphological, optical, and electrical properties were investigated using X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Photoluminescence (PL) spectroscopy, and Source meter instrument, respectively. XRD analysis showed that the films were crystalline in nature. FESEM images showed that the films have a homogenous and compact grain surface. The optical band gap was about 2 eV for both types of film. The I-V characteristics of thin films were analysed at temperatures ranging from 30 °C to 100 °C. It was found that the film fabricated onto silica substrates showed large electrical conductivity as compared to the others. Also, the increment in electrical conductivity was observed with the temperature indicating that the prepared films have a negative temperature coefficient of resistance.

Keywords

Thin film; Bismuth telluride; Photoluminescence; Optical properties; Electrical properties.
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  • Arora S, Jaimini V, Srivastava S & Vijay Y K, J Nanotechnol, (2017).

  • Rogacheva E I, Budnik A V, Dobrotvorskaya M V, Fedorov A G, Krivonogov S I, Mateychenko P V & Sipatov A Y, Thin Solid Films, 612 (2016) 128.

  • El-Sayed H E A, Appl Surf Sci, 250 (2005) 70.

  • Golia S, Arora M, Sharma R K & Rastogi A C Curr Appl Phys, 3 (2003) 195.

  • Das J K & Nahid M A I, Int J Thin Films Sci Technol, 4 (2015) 13.

  • Elyamny S & Kashyout A E H B, Mater Today: Proc, 8 (2019) 680.

  • Lin J M, Chen Y C & Lin C P, J Nanomater, (2013) 1.

  • Saberi Y, Sajjadi S A & Mansouri H, Ceram Int, 47 (2021) 11547.

  • Gupta B K, Sultana R, Singh S, Singh V, Awana G, Gupta A & Awana V P S, Sci Rep, 8 (2018) 9205.


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  • Fabrication of Bismuth Telluride Thin Films using Thermal Evaporation Technique and its Electrical Properties

Abstract Views: 89  |  PDF Views: 53

Authors

Pooja
Department of Physics, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
Paul Singh
Department of Physics, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
Sunil Kumar
Department of Physics, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
Mamta Bulla
Department of Physics, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
Anushree Jatrana
Department of Chemistry, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India
Vinay Kumar
Department of Physics, COBS&H, CCS Haryana Agricultural University, Hisar, Haryana 125 004, India

Abstract


Thin films have received great attention in recent years because of their extensive applications in various fields of science and technology. The studies of the electrical properties of semiconducting thin films have been primarily provoked by attractive micro-electronic device applications. Bismuth Telluride (Bi2Te3) is the most widely used material among the various V- VI compounds. In this study, thin films of Bi2Te3 were fabricated onto different substrates (i.e., glass and silica) by using thermal evaporation technique. Their structural, morphological, optical, and electrical properties were investigated using X-ray diffraction (XRD), Field Emission-Scanning Electron Microscopy (FE-SEM), Photoluminescence (PL) spectroscopy, and Source meter instrument, respectively. XRD analysis showed that the films were crystalline in nature. FESEM images showed that the films have a homogenous and compact grain surface. The optical band gap was about 2 eV for both types of film. The I-V characteristics of thin films were analysed at temperatures ranging from 30 °C to 100 °C. It was found that the film fabricated onto silica substrates showed large electrical conductivity as compared to the others. Also, the increment in electrical conductivity was observed with the temperature indicating that the prepared films have a negative temperature coefficient of resistance.

Keywords


Thin film; Bismuth telluride; Photoluminescence; Optical properties; Electrical properties.

References