Indian Journal of Pure and Applied Physics

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Recent Advances in Indium Selenide (InSe) based Photodetectors: A Mini Review


Affiliations
1 Department of Physics, Dyal Singh College, University of Delhi, New Delhi 110 003, India
2 Renewable Energy Laboratory, School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110 067, India
3 Department of Applied Science, Government Polytechnic for Women, Faridabad, Haryana, 121 006, India
4 Department of Electronics, Zakir Husain Delhi College, University of Delhi, New Delhi 110 002, India

Indium Selenide (InSe) is an emerging two-dimensional (2D) layered metal monochalcogenide (MMC) material which is highly regarded for its unique material properties. Due to the large surface area, high electron mobility and bandgap tunability (Visible to IR), InSe is widely sought for polarization sensitive photodetection. In the recent years, InSe heterostructure based broadband photodetectors (UV-Vis-IR) have received significant scientific attention. Photodetectors based on InSe layers/flakesand their heterostructures (with oxides, graphene, TMDCs, etc.) have displayed ultrahigh efficiency, fast switching and self-powered operation. Till now, a record breaking photoresponsivity up to107 AW-1 with switching time less than 2 μs for InSe based photodetector has been reported. Though, despite of scientific advancements, InSe based photodetectors suffer from numerous technological challenges. Therefore, in this mini review, we present a systematic and comprehensive review of noteworthy recent developments, scientific and technological challenges of InSe based optoelectronic devices. A brief discussion on the future aspects of InSe based photodetectors has also been presented.

Keywords

UV-Vis-IR; Photodectors; Graphene; Thin Film
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  • Recent Advances in Indium Selenide (InSe) based Photodetectors: A Mini Review

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Authors

Monu Mishra
Department of Physics, Dyal Singh College, University of Delhi, New Delhi 110 003, India
Shweta Dhakla
Renewable Energy Laboratory, School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110 067, India
Parvesh K Deendyal
Department of Applied Science, Government Polytechnic for Women, Faridabad, Haryana, 121 006, India
Manish Kumar
Department of Electronics, Zakir Husain Delhi College, University of Delhi, New Delhi 110 002, India
Manish K Kashyap
Renewable Energy Laboratory, School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110 067, India

Abstract


Indium Selenide (InSe) is an emerging two-dimensional (2D) layered metal monochalcogenide (MMC) material which is highly regarded for its unique material properties. Due to the large surface area, high electron mobility and bandgap tunability (Visible to IR), InSe is widely sought for polarization sensitive photodetection. In the recent years, InSe heterostructure based broadband photodetectors (UV-Vis-IR) have received significant scientific attention. Photodetectors based on InSe layers/flakesand their heterostructures (with oxides, graphene, TMDCs, etc.) have displayed ultrahigh efficiency, fast switching and self-powered operation. Till now, a record breaking photoresponsivity up to107 AW-1 with switching time less than 2 μs for InSe based photodetector has been reported. Though, despite of scientific advancements, InSe based photodetectors suffer from numerous technological challenges. Therefore, in this mini review, we present a systematic and comprehensive review of noteworthy recent developments, scientific and technological challenges of InSe based optoelectronic devices. A brief discussion on the future aspects of InSe based photodetectors has also been presented.

Keywords


UV-Vis-IR; Photodectors; Graphene; Thin Film