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Improving On-state current and Ambipolarity of TFET using Gate-Drain and Gate Dielectric Engineering
This article presents the Gate Overlap on Drain with Hetero Gate Dielectric TFET (GDHD-TFET), a novel tunnel FET structure aimed at addressing the low ON current and ambipolar leakage observed in traditional TFETs. By investigating the combined effects of hetero gate dielectric and gate-drain overlapping, the GDHD-TFET offers a significant improvement in design compared with conventional TFET design. Unlike traditional approaches that focus solely on regulating the tunnel barrier widths at the channel-source junction, the GDHD-TFET simultaneously improves the tunnel barrier widths at both channel-source and channel-drain junctions. As a result, the GDHD-TFET achieves remarkable improvements in ON current and ambipolar conduction, surpassing traditional TFET performance by factors of 102 and 104, respectively. Furthermore, it maintains low subthreshold swing (SS) of 29.3 mV/dec indicating its potential for low-power applications.
Keywords
Ambipolarity; Gate overlapping; TFET; Tunnelling barrier width
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