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Sheet charge density of AlxGa1-xN/GaN 2DEG structure is analytically computed as a function of material composition. Strain relaxation factor, carrier concentration and quantized length of the well are also taken into account for computation purpose. Both spontaneous and piezoelectric polarizations are calculated as function of mole fraction and charge density is determined from the simulated findings. Results are important for calculating electrical characteristics of HEMT.


Mole Fraction, Piezoelectric Polarization, Quantized Length, Sheet Charge Density, Sheet Resistance, Spontaneous Polarization, Strain Relaxation Factor.
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