Low Temperature Anodic Bonding Process with Silicon-Gold-Glass Interface for Wafer Level Packaging Applications

In this paper, anodic bonding technique at low temperatures with Si-Au-Glass interface has been demonstrated. Also, the techniques to overcome the challenges like gold diffusion/spreading and non-ohmic contacts has been demonstrated. The bond strengths of the anodic bond process is verified through die shear and stud pull tests and observed a good quality bond strength which is better than 10 times in die shear test and 20 times in stud pull test when compared with MIL-Standards.