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Low Temperature Anodic Bonding Process with Silicon-Gold-Glass Interface for Wafer Level Packaging Applications
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In this paper, anodic bonding technique at low temperatures with Si-Au-Glass interface has been demonstrated. Also, the techniques to overcome the challenges like gold diffusion/spreading and non-ohmic contacts has been demonstrated. The bond strengths of the anodic bond process is verified through die shear and stud pull tests and observed a good quality bond strength which is better than 10 times in die shear test and 20 times in stud pull test when compared with MIL-Standards.
Keywords
Die Shear, Stud Pull, Anodic Bond, Ohmic Contact.
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